Thin cap necessitated by e-beam readback may not be compatible with unlimited cyclability.
High defect density may be intrinsic to high-EBIC or easy-recrystallizing InSe films.
Slow recrystallization time may limit device data rate.
Phase segregation, interdiffusion may appear at higher cycle number.
Qualitatively different effects may occur with electron-beam writing or at nanometric bit diameters.