Requirements for Electron-Beam Phase-Change Media
Has low melting temperature, high glass transition temperature, good chemical stability
Has fast recrystallization at high temperatures but slow recrystallization at low temperatures
Has good morphology and low defect density when grown on Si
Forms low-leakage, high collection-efficiency diode
Early experiments with GeSbTe/Si diodes failed due to high leakage and low collection efficiency.